Chin. Phys. Lett.  2006, Vol. 23 Issue (7): 1896-1899    DOI:
Original Articles |
Application of Plane Wave Method to the Calculation of Electronic States of Nano-Structures
LI Shu-Shen;XIA Jian-Bai
State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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LI Shu-Shen, XIA Jian-Bai 2006 Chin. Phys. Lett. 23 1896-1899
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Abstract The electronic states of nano-structures are studied in the framework of effective-mass envelope-function theory using the plane wave basis. The barrier width and the number of plane waves are proposed to be 2.5 times the effective Bohr radius and 15n, respectively, for n-dimensional nano-structures (n = 1, 2, 3). Our proposals can be widely applied in the design of various nano-structure devices.
Keywords: 73.20.At     
Published: 01 July 2006
PACS:  73.20.At (Surface states, band structure, electron density of states)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I7/01896
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