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Variability on Raman Shift to Stress Coefficient of Porous Silicon |
| LEI Zhen-Kun1,2;KANG Yi-Lan2;CEN Hao2;HU Ming3 |
| 1Department of Engineering Mechanics, Dalian University of Technology, Dalian 116024
2Department of Mechanics, School of Mechanical Engineering, Tianjin University, Tianjin 300072
3Department of Electronic Science and Technology, School of Electronic Information Engineering, Tianjin University, Tianjin 300072 |
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| Cite this article: |
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LEI Zhen-Kun, KANG Yi-Lan, CEN Hao et al 2006 Chin. Phys. Lett. 23 1623-1626 |
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Abstract Porous silicon film is a capillary-like medium, which is able to reveal different meso-elastic modulus with porosity. During the preparation of porous silicon samples, the capillary force is a non-classic force related to the liquid evaporation which directly influences the evolution of residual stress. In this study, a non-linear relation of Raman shift to stress coefficient and the porosity is obtained from the elastic modulus measured with nano-indentation by Bellet et al. [J. Appl. Phys. 60 (1996) 3772] Dynamic capillarity during the drying process of porous silicon is investigated using micro-Raman spectroscopy, and the results reveal that the residual stress resulted from the capillarity increased rapidly. Indeed, the dynamic capillarity has a close relationship with a great deal of micro-pore structures of the porous silicon.
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| Keywords:
81.05.Rm
81.70.Fy
78.30.Am
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Published: 01 June 2006
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| PACS: |
81.05.Rm
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(Porous materials; granular materials)
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81.70.Fy
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(Nondestructive testing: optical methods)
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78.30.Am
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(Elemental semiconductors and insulators)
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