Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

Chin. Phys. Lett.

2006, Vol. 23

Issue (5): 1327-1330 DOI:

Original Articles

Modelling of Chirality-Dependent Current--Voltage Characteristics of Carbon-Nanotube Field-Effect Transistors

ZHAO Xu;WANG Yan;YU Zhi-Ping

Institute of Microelectronics, Tsinghua University, Beijing 100084

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ZHAO Xu, WANG Yan, YU Zhi-Ping 2006 Chin. Phys. Lett. 23 1327-1330

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Abstract Current--voltage characteristics of ballistic carbon-nanotube field-effect transistors are characterized with an iterative simulation program. The influence of carbon-nanotube chirality and diameter on the output current is considered. An analytical current--voltage expression under the quantum capacitance limit and low-voltage application is derived. Our simulation results are compared with actual measurement data.

Keywords: 85.30.De 85.30.Tv 85.35.Kt

Published: 01 May 2006

PACS:	85.30.De	(Semiconductor-device characterization, design, and modeling)
	85.30.Tv	(Field effect devices)
	85.35.Kt	(Nanotube devices)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I5/01327

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