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Growth Feature of Cubic Boron Nitride on c-BN Crystal Substrates |
| YANG Da-Peng;SU Zuo-Peng;DU Yong-Hui;JI Xiao-Rui;YANG Xu-Xin;GONG Xi-Liang;ZHANG Tie-Chen |
| National Laboratory of Superhard Materials, Jilin University, Changchun 130023 |
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| Cite this article: |
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YANG Da-Peng, SU Zuo-Peng, DU Yong-Hui et al 2006 Chin. Phys. Lett. 23 1324-1326 |
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Abstract Cubic boron nitride (c-BN) films were deposited on highly-oriented (111) bulk c-BN crystal by using the rf magnetron sputtering method. The growth films are characterized by micro-Raman spectroscopy (μ-RS) and scanning electron microscopy (SEM). The results show that the high crystallization electron transparent c-BN films in thickness of about 10μm are obtained. Island and step growth models are clearly shown.
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| Keywords:
81.15.-z
81.05.Je
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Published: 01 May 2006
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| PACS: |
81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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81.05.Je
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(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
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