| Original Articles |
|
|
|
|
Synthesis and PL Properties of ZnSe Nanowires with Zincblende and Wurtzite Structures |
| XIA Dong-Yan1;DAI Lun1,2;XU Wan-Jin1,2;YOU Li-Ping1,3;ZHANG Bo-Rui1,2;RAN Guang-Zhao1,2;QIN Guo-Gang1,2 |
| 1School of Physics, Peking University, Beijing 100871
2State Key Lab for Mesoscopic Physics, Peking University, Beijing 100871
3Electron Microscopy Laboratory, Peking University, Beijing 100871 |
|
| Cite this article: |
|
XIA Dong-Yan, DAI Lun, XU Wan-Jin et al 2006 Chin. Phys. Lett. 23 1317-1320 |
|
|
|
|
Abstract Single crystalline ZnSe nanowires with both zincblende and wurtzite structures have been synthesized via a chemical vapour deposition method under different growth conditions. The nanowires are usually 50--80nm in diameter, and several tens of microns in length. Room-temperature photoluminescence spectra from zincblende and wurtzite ZnSe nanowires show a broad luminescence band peaked at around 2.71eV and a deep level emission band peaked at around 2.00eV, respectively. Effects of post-growth annealing on the photoluminescence of these nanowires have been investigated. Strong room-temperature band-edge emission could be obtained from the annealed zincblende ZnSe nanowires.
|
| Keywords:
81.05.Dz
61.46.+w
61.66.-f
78.55.Et
81.15.Gh
|
|
|
Published: 01 May 2006
|
|
| PACS: |
81.05.Dz
|
(II-VI semiconductors)
|
| |
61.46.+w
|
|
| |
61.66.-f
|
(Structure of specific crystalline solids)
|
| |
78.55.Et
|
(II-VI semiconductors)
|
| |
81.15.Gh
|
(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
