| Original Articles |
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Electroluminescence Afterglow from Indium Tin Oxide/Si-Rich SiO2/p-Si Structure |
| WANG Xiao-Xin;ZHANG Jian-Guo;CHENG Bu-Wen;YU Jin-Zhong;WANG Qi-Ming |
| State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences,
Beijing 100083 |
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| Cite this article: |
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WANG Xiao-Xin, ZHANG Jian-Guo, CHENG Bu-Wen et al 2006 Chin. Phys. Lett. 23 1306-1309 |
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Abstract Indium tin oxide/Si-rich SiO2/p-Si structured devices are fabricated to study the electroluminescence (EL) of the Si-rich SiO2 (SRO) material. The obvious peaks at ～1050nm and ～1260nm in the EL are ascribed to localized state transitions of amorphous Si (α-Si) clusters. The EL afterglow associated with α-Si clusters is observed from this structure at room temperature, while the afterglow is absent in the case of optical pumping. It is believed that carrier-induced defects act as trap centres in the α-Si clusters, resulting in the EL afterglow. The phenomenon of the EL afterglow indicates the limits of EL performance and electrical modulation of the SRO material with a larger fraction of α-Si clusters.
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| Keywords:
78.60.Fi
73.61.Jc
78.67.-n
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Published: 01 May 2006
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| PACS: |
78.60.Fi
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(Electroluminescence)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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78.67.-n
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(Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)
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