Photoelectric Characteristic of La0.9Sr0.1MnO3/SrNb0.01Ti0.99O3 p--n eterojunctions

Chin. Phys. Lett.

2006, Vol. 23

Issue (4): 982-985 DOI:

Original Articles

Photoelectric Characteristic of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ p--n eterojunctions

HUANG Yan-Hong¹;JIN Kui-Juan¹;ZHAO Kun¹;Lü Hui-Bin¹;HE Meng¹;CHEN Zheng-Hao¹;ZHOU Yue-Liang¹;YANG Guo-Zhen¹ ;MA Xiu-Liang²

¹Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080 ²Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016

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HUANG Yan-Hong, JIN Kui-Juan, ZHAO Kun et al 2006 Chin. Phys. Lett. 23 982-985

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Abstract Good rectifying current--voltage characteristics and nanosecond photoelectric effects are observed in the p--n heterojunctions of La_0.9Sr_0.1MnO₃/SrNb_0.01Ti_0.99O₃ fabricated by laser molecular beam epitaxy. The rise time is about 26ns and the full width at half maximum is about 125ns for the open-circuit photovoltaic pulses when the La_0.9Sr_0.1MnO₃/ film in the heterojunction is irradiated by a laser operated at wavelength 308nm with pulse duration of about 25ns. A qualitative explanation is presented, based on an analysis of the photoelectric effect of p--n heterojunction.

Keywords: 75.47.Lx 85.50.Kk 72.40.+w

Published: 01 April 2006

PACS:	75.47.Lx	(Magnetic oxides)
	85.50.Kk
	72.40.+w	(Photoconduction and photovoltaic effects)

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I4/0982

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	HUANG Yan-Hong
	JIN Kui-Juan
	ZHAO Kun
	Lü Hui-Bin
	HE Meng
	CHEN Zheng-Hao
	ZHOU Yue-Liang
	YANG Guo-Zhen
	MA Xiu-Liang

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