Chin. Phys. Lett.  2006, Vol. 23 Issue (4): 960-963    DOI:
Original Articles |
Effect of Bias Step on the I-V Curve in Double-Barrier AlGaAs/GaAs/AlGaAs Resonant-Tunnelling Devices
DAI Zhen-Hong1,2;NI Jun1
1Department of Physics and Key Laboratory of Atomic and Molecular Nanoscience, Tsinghua University, Beijing 100084 Department of Physics, Yantai University, Yantai 264005
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DAI Zhen-Hong, NI Jun 2006 Chin. Phys. Lett. 23 960-963
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Abstract We investigate the non-equilibrium electron transport properties of double-barrier AlGaAs/GaAs/AlGaAs resonant-tunnelling devices in nonlinear bias using the time-dependent simulation technique. It is found that the bias step of the external bias voltage applied on the device has an important effect on the final current-voltage (I-V) curves. The results show that different bias step applied on the device can change the bistability, hysteresis and current plateau structure of the I-V curve. The current plateau occurs only in the case of small bias step. As the bias step increases, this plateau structure disappears.

Keywords: 73.40.Gk      73.31.Fg      73.23.-b      73.50.-h     
Published: 01 April 2006
PACS:  73.40.Gk (Tunneling)  
  73.31.Fg  
  73.23.-b (Electronic transport in mesoscopic systems)  
  73.50.-h (Electronic transport phenomena in thin films)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I4/0960
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