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Analysis of Local Structures around Ni Atoms Doped in ZnO-Based Diluted Magnetic Semiconductors by Fluorescence EXAFS |
| LI Bin-Bin1;XIU Xiang-Qian1;ZHANG Rong1;TAO Zhi-Kuo1;CHEN Lin1;XIE Zi-Li1;ZHENG You-Dou1;HE Bo2/sup> |
| 1Jiangsu Provincial Key Laboratory of Advanced Photonic and lectronic Materials, Department of Physics, Nanjing University, Nanjing 210093
2National Synchrotron Radiation Laboratory, University of Science and Technology of China, Hefei 230026 |
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| Cite this article: |
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LI Bin-Bin, XIU Xiang-Qian, ZHANG Rong et al 2006 Chin. Phys. Lett. 23 907-910 |
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Abstract Zn1-xNixO (x=0.001, 0.01, 0.02, 0.05 and 0.20) powders are prepared by sol-gel method. An extended x-ray absorption fine structure technique (EXAFS) for the Ni K-edge is employed to probe the local structures around Ni atoms doped in ZnO powders by fluorescence mode. The near edge EXAFS of the samples does not change in the range of Ni concentration from x=0.001 to 0.05, which is consistent with the results of x-ray diffraction of the samples. The simulation results for the first shell EXAFS signals indicated that Ni atoms are substituted in Zn sites.
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| Keywords:
61.10.-i
61.10.Ht
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Published: 01 April 2006
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