| Original Articles |
|
|
|
|
Improvements of the Analytical Model of Monte Carlo |
| HE Qing-Fang;XU Zheng;TENG Feng;LIU De-Ang;XU Xu-Rong |
| Institute of Optoelectronic Technology, Beijing Jiaotong University,Beijing 100044
Key Laboratory of Luminescence and Optical Information (Ministry of Education), Beijing Jiaotong University, Beijing 100044 |
|
| Cite this article: |
|
HE Qing-Fang, XU Zheng, TENG Feng et al 2006 Chin. Phys. Lett. 23 701-704 |
|
|
|
Abstract By extending the conduction band structure, we set up a new analytical model in ZnS. Compared the results with both the old analytical model and the full band model, it is found that they are possibly in reasonable agreement with the full band method and we can improve the calculation precision. Another important work is to reduce the programme computation time using the method of data fitting scattering rate curves.
|
| Keywords:
73.50.Fq
78.20.Bh
72.10.Bg
05.60.Cd
79.20.Ap
|
|
|
Published: 01 March 2006
|
|
| PACS: |
73.50.Fq
|
(High-field and nonlinear effects)
|
| |
78.20.Bh
|
(Theory, models, and numerical simulation)
|
| |
72.10.Bg
|
(General formulation of transport theory)
|
| |
05.60.Cd
|
(Classical transport)
|
| |
79.20.Ap
|
(Theory of impact phenomena; numerical simulation)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
