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Resonant Tunnelling Diodes and High Electron Mobility Transistors Integrated on GaAs Substrates |
| HUANG Ying-Long;MA Long;YANG Fu-Hua;WANG Liang-Chen;ZENG Yi-Ping |
| National Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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HUANG Ying-Long, MA Long, YANG Fu-Hua et al 2006 Chin. Phys. Lett. 23 697-700 |
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Abstract AlGaAs/InGaAs high electron mobility transistors (HEMTs) and AlAs/GaAs resonant tunnelling diodes (RTDs) are integrated on GaAs substrates. Molecular beam epitaxy is used to grow the RTD on the HEMT structure. The current--voltage characteristics of the RTD and HEMT are obtained on a two-inch wafer. At room temperature, the peak-valley current ratio and the peak voltage are about 4.8 and 0.44V, respectively. The HEMT is characterized by a gate length of 1μm, a maximum transconductance of 125mS/mm, and a threshold voltage of -1.0V. The current--voltage characteristics of the series-connected RTDs are presented. The current--voltage curves of the parallel connection of one RTD and one HEMT are also presented.
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| Keywords:
73.40.Kp
73.61.Ey
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Published: 01 March 2006
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| PACS: |
73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.61.Ey
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(III-V semiconductors)
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