| Original Articles |
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Compositional and Structural Properties of TiO2-xNx Thin Films Deposited by Radio-Frequency Magnetron Sputtering |
| JING Shi-Wei1,2;LIU Yi-Chun2;LIANG Yu1;MA Jian-Gang2;LU You-Ming2;SHEN De-Zhen2;ZHANG Ji-Ying2;FAN Xi-Wu2;MU Ri-Xiang3 |
| 1Key Laboratory of Excited State Processes, Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130033
2Center for Advanced Opto-electronic Functional Material Research, Northeast Normal University, Changchun 130024
3Nanoscale Materials and Sensors Center for Photonic Materials and Devices, Fisk University, Nashville, TN 37208, USA |
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| Cite this article: |
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JING Shi-Wei, LIU Yi-Chun, LIANG Yu et al 2006 Chin. Phys. Lett. 23 682-685 |
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Abstract TiO2-xNx thin films are deposited onto Si(100) and quartz substrates by a rf magnetron sputtering method using a titanium metal disc as a target in Ar, N2, and O2 atmospheres. The substrate temperature is kept at 300°C. The O2 and Ar gas flow rates are kept to be constants and the N gas flow rate is varied. TiO2-xNx films with different N contents are characterized by x-ray diffraction and x-ray photoelectron spectroscopy. The results indicate that the TiO2-xNx thin films can be obtained at 13% N and 15% N contents in the film, and the films with mixed TiO2 and TiN crystal can be obtained at 13% N and 15% N contents in the film. In terms of the results of x-ray photoelectron spectroscopy, N 1s of β-N (396eV) is the main component in the TiO2-xNx thin films. Because the energy level of β-N is positioned above the valence-band maximum of TiO2, an effective optical-energy gap decreases from 2.8eV (for pure TiO2 film deposited by the same rf sputtering system) to 2.3eV, which is verified by the optical-absorption spectra.
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| Keywords:
68.55.Ln
78.55.Et
61.10.Nz
82.80.Pv
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Published: 01 March 2006
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| PACS: |
68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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78.55.Et
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(II-VI semiconductors)
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61.10.Nz
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82.80.Pv
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(Electron spectroscopy (X-ray photoelectron (XPS), Auger electron spectroscopy (AES), etc.))
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