| Original Articles |
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Comparison between Two Kinds of Semiconductor Absorbers for Mode-Locking in Nd:YVO4 Laser |
| WANG Cui-Luan1;WANG Yong-Gang1,3;MA Xiao-Yu1;LIU Yang2;SUN Li-Qun2;TIAN Qian2;ZANG Zhi-Gang3;WANG Qin-Yue3 |
| 1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2State Key Laboratory of Precision Measurement Technology and Instrument, Tsinghua University, Beijing 100084
3Ultrafast Laser Laboratory, School of Precision Instrument and Optoelectronics Engineering, University of Tianjin, Tianjin 300072 |
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| Cite this article: |
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WANG Cui-Luan, WANG Yong-Gang, MA Xiao-Yu et al 2006 Chin. Phys. Lett. 23 616-618 |
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Abstract We have demonstrated passive mode-locking in a diode-end-pumped Nd:YVO4 laser using two kinds of semiconductor absorbers whose relaxation region comes from In0.25Ga0.75As grown at low temperature (LT) and GaAs/air interface respectively. Mode-locking, using absorbers of the GaAs/air interface relaxation region, has the characteristics of less Q-switching tendency and higher average output power than that using absorbers of LT In0.25Ga0.75As relaxation region, but is not as stable as the latter.
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| Keywords:
42.55.Xi
42.55.Rz
42.60.Fc
42.60.Gd
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Published: 01 March 2006
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| PACS: |
42.55.Xi
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(Diode-pumped lasers)
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42.55.Rz
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(Doped-insulator lasers and other solid state lasers)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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42.60.Gd
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(Q-switching)
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