Chin. Phys. Lett.  2006, Vol. 23 Issue (2): 436-438    DOI:
Original Articles |
Effect of Small-Angle Scattering on the Integer Quantum Hall Plateau
SHU Qiang1;LIN Yao-Wang1,2;XING Xiao-Dong1;YAO Jiang-Hong1;PI Biao1;SHU Yong-Chun1;WANG Zhan-Guo1,2;XU Jing-Jun1
1The Key Laboratory of Advanced Technique and Fabrication for Weak-Light Nonlinear Photonics Materials (Ministry of Education), Nankai University, Tianjin 300457 2Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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SHU Qiang, LIN Yao-Wang, XING Xiao-Dong et al  2006 Chin. Phys. Lett. 23 436-438
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Abstract A GaAs/AlGaAs two-dimensional electron gas (2DEG) structure with the high mobility of mu2K=1.78×106cm1/Vs has been studied by low-temperature Hall and Shubnikov de Hass (SdH) measurements. Quantum lifetimes related to all-angle scattering events reduced from 0.64ps to 0.52ps after illuminating by Dingle plots, and transport lifetimes related to large-angle scattering events increasing from 42.3ps to 67.8ps. These results show that small-angle scattering events become stronger. It is clear that small-angle scattering events can cause the variation of the widths of the quantum Hall plateaus.
Keywords: 71.20.Nr      72.2.Jv     
Published: 01 February 2006
PACS:  71.20.Nr (Semiconductor compounds)  
  72.2.Jv  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I2/0436
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SHU Qiang
LIN Yao-Wang
XING Xiao-Dong
YAO Jiang-Hong
PI Biao
SHU Yong-Chun
WANG Zhan-Guo
XU Jing-Jun
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