| Original Articles |
|
|
|
|
Metallization of Cu3N Semiconductor under High Pressure |
| YANG Liu-Xiang;ZHAO Jing-Geng;YU Yong;LI Feng-Ying;YU Ri-Cheng;JIN Chang-Qing |
| Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
|
| Cite this article: |
|
YANG Liu-Xiang, ZHAO Jing-Geng, YU Yong et al 2006 Chin. Phys. Lett. 23 426-427 |
|
|
|
|
Abstract Using the four-probe method, we investigate the electrical conductivity of Cu3N under high pressure with the diamond anvil cell. Cu3N is a semiconductor at ambient pressure showing a band gap about 1eV. With the application of quasi-hydrostatic pressures, its resistance decreases dramatically over five orders of magnitude from ambient to 9GPa. The compound became a metal at pressure about 5.5GPa, which is in well agreement with the recent first principle calculation.
|
| Keywords:
62.50.+p
71.30.+h
81.05.Je
|
|
|
Published: 01 February 2006
|
|
| PACS: |
62.50.+p
|
|
| |
71.30.+h
|
(Metal-insulator transitions and other electronic transitions)
|
| |
81.05.Je
|
(Ceramics and refractories (including borides, carbides, hydrides, nitrides, oxides, and silicides))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
