| Original Articles |
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Electrical and Optical Properties of Bulk ZnO Single Crystal Grown by Flux Bridgman Method |
| LI Xin-Hua1,2;XU Jia-Yue1;JIN Min1,2;SHEN Hui1,2;LI Xiao-Min1 |
| ¹Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050
²Graduate School of the Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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LI Xin-Hua, XU Jia-Yue, JIN Min et al 2006 Chin. Phys. Lett. 23 3356-3358 |
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Abstract Zinc oxide (ZnO) single crystals are grown by the modified vertical Bridgman method using a PbF₂ flux. The maximum size of the as-grown ZnO crystal is about Ф25 mm×5 mm. The transmittance of the as-grown ZnO crystal is more than 70% in the range of 600--800 nm and the optical band gap is estimated to be 3.21 eV. The photoluminescence spectrum indicates that the as-grown ZnO crystal has a very low concentration of native defects and is much closed to its stoichiometry. The electrical measurement exhibits that the ZnO crystal has low electrical resistivity of 0.02394Ωcm-1 and a high carrier concentration of 2.10×1018 cm-3.
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| Keywords:
77.84.Bw
78.55.-m
81.05.Dz
81.10.Dn
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Published: 01 December 2006
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| PACS: |
77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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78.55.-m
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(Photoluminescence, properties and materials)
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81.05.Dz
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(II-VI semiconductors)
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81.10.Dn
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(Growth from solutions)
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