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Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films |
| PANG Hong-Chao¹;LUO Shun-Zhong²;LONG Xing-Gui²;AN Zhu¹;LIU Ning¹;DUAN Yan-Min¹;WU Xing-Chun²;YANG Ben-Fu²;WANG Pei-Lu¹;ZHENG Si-Xiao1 |
| ¹Key laboratory of Radiation Physics and Technology of MOE, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064
²Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 321900
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| Cite this article: |
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PANG Hong-Chao&sup, LUO Shun-Zhong&sup, LONG Xing-Gui&sup et al 2006 Chin. Phys. Lett. 23 3238-3241 |
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Abstract Helium-charged nanocrystalline titanium films have been deposited by He--Ar magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60°C to 350°C while the other deposition parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2 at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 2θ angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.
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| Keywords:
28.41.Qb
81.07.Bc
81.15.Cd
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Published: 01 December 2006
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| PACS: |
28.41.Qb
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(Structural and shielding materials)
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81.07.Bc
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(Nanocrystalline materials)
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81.15.Cd
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(Deposition by sputtering)
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