Chin. Phys. Lett.  2006, Vol. 23 Issue (12): 3238-3241    DOI:
Original Articles |
Effects of Substrate Temperature on Helium Content and Microstructure of Nanocrystalline Titanium Films
PANG Hong-Chao¹;LUO Shun-Zhong²;LONG Xing-Gui²;AN Zhu¹;LIU Ning¹;DUAN Yan-Min¹;WU Xing-Chun²;YANG Ben-Fu²;WANG Pei-Lu¹;ZHENG Si-Xiao1
¹Key laboratory of Radiation Physics and Technology of MOE, Institute of Nuclear Science and Technology, Sichuan University, Chengdu 610064 ²Institute of Nuclear Physics and Chemistry, China Academy of Engineering Physics, Mianyang 321900
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PANG Hong-Chao&sup, LUO Shun-Zhong&sup, LONG Xing-Gui&sup et al  2006 Chin. Phys. Lett. 23 3238-3241
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Abstract Helium-charged nanocrystalline titanium films have been deposited by He--Ar magnetron co-sputtering. The effects of substrate temperature on the helium content and microstructure of the nanocrystalline titanium films have been studied. The results indicate that helium atoms with a high concentration are evenly incorporated in the deposited titanium films. When the substrate temperature increases from 60°C to 350°C while the other deposition parameters are fixed, the helium content decreases gradually from 38.6 at.% to 9.2 at.%, which proves that nanocrystalline Ti films have a great helium storage capacity. The 2θ angle of the Bragg peak of (002) crystal planes of the He-charged Ti film shifts to a lower angle and that of (100) crystal plane is unchanged as compared with that of the pure Ti film, which indicates that the lattice parameter c increases and a keeps at the primitive value. The grain refining and helium damage result in the diffraction peak broadening.

Keywords: 28.41.Qb      81.07.Bc      81.15.Cd     
Published: 01 December 2006
PACS:  28.41.Qb (Structural and shielding materials)  
  81.07.Bc (Nanocrystalline materials)  
  81.15.Cd (Deposition by sputtering)  
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http://cpl.iphy.ac.cn/       OR      http://cpl.iphy.ac.cn/Y2006/V23/I12/03238
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PANG Hong-Chao&sup
LUO Shun-Zhong&sup
LONG Xing-Gui&sup
AN Zhu&sup
LIU Ning&sup
DUAN Yan-Min&sup
WU Xing-Chun&sup
YANG Ben-Fu&sup
WANG Pei-Lu&sup
ZHENG Si-Xiao
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