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Modelling of Gettering by Mechanical Damage of Metallic Impurities in Silicon |
| F. Ayad;M. Remram |
| Department of Electronics, University of Mentouri Route of Ain El-Bay Constantine, 25000 Algeria |
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| Cite this article: |
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F. Ayad, M. Remram 2006 Chin. Phys. Lett. 23 3058-3060 |
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Abstract Reducing the concentration of the metallic impurities present in silicon-based electronic components plays a vital role in manufactures. Gettering by induced mechanical damage is one of the methods used in neutralizing these impurities. To simulate this type of gettering, we explicitly include the role of the traps due to mechanical damage, based on the mechanism of kick-out. In our model, we choose the essential parameters including concentration of impurities, thickness, temperature, time, etc. The diffusion coefficient and equilibrium concentration of the silicon interstitials estimated from the literature have been adjusted to be in good agreement with the experimental data.
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| Keywords:
71.20.Be
71.55.-i
66.30.Lw
61.72.Yx
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Published: 01 November 2006
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| PACS: |
71.20.Be
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(Transition metals and alloys)
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71.55.-i
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(Impurity and defect levels)
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66.30.Lw
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(Diffusion of other defects)
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61.72.Yx
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(Interaction between different crystal defects; gettering effect)
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