Chin. Phys. Lett.  2006, Vol. 23 Issue (11): 3052-3054    DOI:
Original Articles |
Fabrication of GaN Nanorods in a Large Scale on Si(111) Substrate by Ammoniating Technique
AI Yu-Jie1;XUE Cheng-Shan1;SUN Li-Li1;SUN Chuan-Wei2;ZHUANG Hui-Zhao1;WANG Fu-Xue;CHEN Jin-Hua1;LI Hong1
1Institute of Semiconductors, Shandong Normal University, Jinan 250014 2School of Information Science and Engineering, Jinan University, Jinan 250022
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AI Yu-Jie, XUE Cheng-Shan, SUN Li-Li et al  2006 Chin. Phys. Lett. 23 3052-3054
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Abstract GaN nanorods in a large scale have been synthesized on Si (111) substrates by ammoniating Ga2O3/Mg films under flowing ammonia atmosphere at the temperature of 1000°C for 15min. The as-synthesized GaN nanorods are characterized by scanning electron microscopy, x-ray diffraction, x-ray photoelectron spectroscopy, and high-resolution transmission electron microscopy. The results demonstrate that these straight nanorods are hexagonal wurtzite GaN single crystals in diameters ranging from 200nm to 600nm.
Keywords: 68.37.Hk      68.55.Jk      78.30.Fs     
Published: 01 November 2006
PACS:  68.37.Hk (Scanning electron microscopy (SEM) (including EBIC))  
  68.55.Jk  
  78.30.Fs (III-V and II-VI semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2006/V23/I11/03052
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AI Yu-Jie
XUE Cheng-Shan
SUN Li-Li
SUN Chuan-Wei
ZHUANG Hui-Zhao
WANG Fu-Xue
CHEN Jin-Hua
LI Hong
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