Nonlinear Optical Response of nc-Si-SiO<suB>2</suB> Films Studied with Femtosecond Four-Wave Mixing Technique

Chin. Phys. Lett.

2006, Vol. 23

Issue (11): 2989-2992 DOI:

Original Articles

Nonlinear Optical Response of nc-Si-SiO₂ Films Studied with Femtosecond Four-Wave Mixing Technique

GUO Heng-Qun¹;WANG Qi-Ming²

¹College of Information Science and Technology, Huaqiao University, Quanzhou 362021 ²Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083

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GUO Heng-Qun, WANG Qi-Ming 2006 Chin. Phys. Lett. 23 2989-2992

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Abstract Nonlinear optical properties of silicon nanocrystals (nc-Si) embedded in SiO₂ films are investigated using time-resolved four-wave mixing technique with a femtosecond laser. The off-resonant third-order nonlinear susceptibility X⁽³⁾ is observed to be 1.3×10^-10esu at 800nm. The relaxation time of the film is fast as short as 50fs. The off-resonant nonlinearity is predominantly electronic in origin and enhanced due to quantum confinement.

Keywords: 42.65.-k 78.67.Bf 78.47.+p

Published: 01 November 2006

PACS:	42.65.-k	(Nonlinear optics)
	78.67.Bf	(Nanocrystals, nanoparticles, and nanoclusters)
	78.47.+p

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2006/V23/I11/02989

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