| Original Articles |
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Synthesis and Field Emission of ZnO Nanostructures on CuO Catalyzed Porous Silicon Substrate |
| YU Ke1;ZHANG Yong-Sheng1;OUYANG Shi-Xi2;ZHANG Qing-Jie2;LUO Lai-Qiang1;ZHANG Qiu-Xiang1;CHANG Zhong-Kun3,LI Li-Jun3;ZHU Zi-Qiang1 |
| 1Department of Electronic Engineering, East China Normal University, Shanghai 200062
2State Key Laboratory of Advanced Technology for Materials Synthesis and Processing, Wuhan University of Technology, Wuhan 430070
3School of Physics and Microelectronics, Shangdong University, Jinan 250100 |
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| Cite this article: |
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YU Ke, ZHANG Yong-Sheng, OUYANG Shi-Xi et al 2005 Chin. Phys. Lett. 22 2411-2414 |
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Abstract Mass production of ZnO nanobelts and hexagonal nanorods has been successfully synthesized on CuO catalyzed porous silicon (PS) using a simple vapour--solid (VS) growth method. A comparison of their morphologies is investigated by scanning electron microscopy (SEM). The transmission electron microscopy (TEM) confirms that ZnO nanobelts and nanorods are single crystalline with the growth direction of (0110) and (0001), respectively. Field emission tests indicate that the ZnO nanostructures on porous silicon have low turn-on field of about 3.6V/μm (at 1.0μA/cm2) and the threshold field of about 8.3V/μm (at 1.0mA/cm2), high emission site density (ESD) of approximately 104cm-2.
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| Keywords:
81.05.Dz
81.10.Aj
85.45.Db
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Published: 01 September 2005
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| PACS: |
81.05.Dz
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(II-VI semiconductors)
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81.10.Aj
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(Theory and models of crystal growth; physics and chemistry of crystal growth, crystal morphology, and orientation)
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85.45.Db
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(Field emitters and arrays, cold electron emitters)
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