Chin. Phys. Lett.  2005, Vol. 22 Issue (9): 2379-2381    DOI:
Original Articles |
Figure of Merit for Detectors Based on Laser-Induced hermoelectric Voltages in La1-xCaxMnO3 and Ba2Cu3O7-σ Thin Films
ZHANG Guo-Yong1,2;ZHANG Peng-Xiang1,2;ZHANG Hui1,2;LEE Wing-Kee3
1Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 2Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051 3Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong
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ZHANG Guo-Yong, ZHANG Peng-Xiang, ZHANG Hui et al  2005 Chin. Phys. Lett. 22 2379-2381
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Abstract A figure of merit (FOM) Z = Upr, where Up is the peak voltage, and τr is the rise time of the laser-induced thermoelectric voltage (LITV) signal, is defined for photodetector based on the LITV and the influence of the parameters on FOM is analysed based on the time dependence of LITVs in La1-xCaxMnO3 (LCMO) and YBa2Cu3O7-σ (YBCO) thin films grown on vicinal-cut substrates. We find that the FOM increases as the photon penetration depth decreases, and linearly increases with the thermal diffusion constant D. To achieve the highest FOM, the film thickness d has to be controlled to an optimum value. We also find that the FOM is directly proportional to the laser absorption coefficient α0, the laser energy density per pulse E, the illuminated length of film l, sin(2α) [αis the vicinal-cut angle], the Seebeck coefficient anisotropy (Sab - Sc ), and is inversely proportional to the mass density ρ and the specific heat c0.
Keywords: 74.25.Gz      73.50.Lw      72.40.+w     
Published: 01 September 2005
PACS:  74.25.Gz (Optical properties)  
  73.50.Lw (Thermoelectric effects)  
  72.40.+w (Photoconduction and photovoltaic effects)  
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http://cpl.iphy.ac.cn/       OR      http://cpl.iphy.ac.cn/Y2005/V22/I9/02379
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