Chin. Phys. Lett.  2005, Vol. 22 Issue (9): 2379-2381    DOI:
Original Articles |
Figure of Merit for Detectors Based on Laser-Induced hermoelectric Voltages in La1-xCaxMnO3 and Ba2Cu3O7-σ Thin Films
ZHANG Guo-Yong1,2;ZHANG Peng-Xiang1,2;ZHANG Hui1,2;LEE Wing-Kee3
1Department of Materials Science and Engineering, University of Science and Technology of China, Hefei 230026 2Institute of Advanced Materials for Photoelectronics, Kunming University of Science and Technology, Kunming 650051 3Department of Physics, The Chinese University of Hong Kong, Shatin, New Territories, Hong Kong
Cite this article:   
ZHANG Guo-Yong, ZHANG Peng-Xiang, ZHANG Hui et al  2005 Chin. Phys. Lett. 22 2379-2381
Download: PDF(244KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract A figure of merit (FOM) Z = Upr, where Up is the peak voltage, and τr is the rise time of the laser-induced thermoelectric voltage (LITV) signal, is defined for photodetector based on the LITV and the influence of the parameters on FOM is analysed based on the time dependence of LITVs in La1-xCaxMnO3 (LCMO) and YBa2Cu3O7-σ (YBCO) thin films grown on vicinal-cut substrates. We find that the FOM increases as the photon penetration depth decreases, and linearly increases with the thermal diffusion constant D. To achieve the highest FOM, the film thickness d has to be controlled to an optimum value. We also find that the FOM is directly proportional to the laser absorption coefficient α0, the laser energy density per pulse E, the illuminated length of film l, sin(2α) [αis the vicinal-cut angle], the Seebeck coefficient anisotropy (Sab - Sc ), and is inversely proportional to the mass density ρ and the specific heat c0.
Keywords: 74.25.Gz      73.50.Lw      72.40.+w     
Published: 01 September 2005
PACS:  74.25.Gz (Optical properties)  
  73.50.Lw (Thermoelectric effects)  
  72.40.+w (Photoconduction and photovoltaic effects)  
URL:       OR
E-mail this article
E-mail Alert
Articles by authors
ZHANG Guo-Yong
ZHANG Peng-Xiang
LEE Wing-Kee
Related articles from Frontiers Journals
[1] GONG Sai, WANG Yue-Hua**, ZHAO Xin-Yin, ZHANG Min, ZHAO Na, DUAN Yi-Feng . Structural, Electronic and Optical Properties of BiAl xGa1−xO3 (x=0, 0.25, 0.5 and 0.75)[J]. Chin. Phys. Lett., 2011, 28(8): 2379-2381
[2] SHI Wei**, MA Xiang-Rong, . Peculiar Transmission Characteristics of the Large Gap Semi-Insulating GaAs Photoconductive Switch[J]. Chin. Phys. Lett., 2011, 28(12): 2379-2381
[3] LIU Xiu-Huan, CHEN Zhan-Guo**, JIA Gang, WANG Hai-Yan, GAO Yan-Jun, LI Yi . A [111]-Cut Si Hemisphere Two-Photon Response Photodetector[J]. Chin. Phys. Lett., 2011, 28(11): 2379-2381
[4] SHI Wei, **, JIA Ji-Qiang, JI Wei-Li, GUI Huai-Meng . Flashover in Back-Triggered Photoconductive Semiconductor Switch[J]. Chin. Phys. Lett., 2011, 28(1): 2379-2381
[5] HU Ling, SUN Yu-Ping, WANG Bo, LUO Xuan, SHENG Zhi-Gao, ZHU Xue-Bin, SONG Wen-Hai, YANG Zhao-Rong, DAI Jian-Ming. Modulation of Insulator-Metal Transition Temperature by Visible Light in La7/8Sr1/8MnO3 Thin Film[J]. Chin. Phys. Lett., 2010, 27(9): 2379-2381
[6] SHI Wei, ZHANG Zhen-Zhen, HOU Lei. Electrical Field Distribution in Terahertz SI-GaAs Photoconductive Antennas[J]. Chin. Phys. Lett., 2010, 27(8): 2379-2381
[7] XU Yue, YAN Feng, CHEN Dun-Jun, SHI Yi, WANG Yong-Gang, LI Zhi-Guo, YANG Fan, WANG Jos-Hua, LIN Peter, CHANG Jian-Guang. Improved Programming Efficiency through Additional Boron Implantation at the Active Area Edge in 90nm Localized Charge-Trapping Non-volatile Memory[J]. Chin. Phys. Lett., 2010, 27(6): 2379-2381
[8] HUANG Qing-Song, DONG Dong-Qing, XU Jian-Ping, ZHANG Xiao-Song, ZHANG Hong-Min, LI Lan. White Emitting ZnS Nanocrystals: Synthesis and Spectrum Characterization[J]. Chin. Phys. Lett., 2010, 27(5): 2379-2381
[9] LU Bao-Yang, LIU Cong-Cong, LU Shan, XU Jing-Kun, JIANG Feng-Xing, LI Yu-Zhen, ZHANG Zhuo. Thermoelectric Performances of Free-Standing Polythiophene and Poly(3-Methylthiophene) Nanofilms[J]. Chin. Phys. Lett., 2010, 27(5): 2379-2381
[10] XING Jie, GUO Er-Jia, JIN Kui-Juan, LU Hui-Bin, HE Meng, WEN Juan, YANG Fang. Ultraviolet Sensitive Ultrafast Photovoltaic Effect in Tilted KTaO3 Single Crystals[J]. Chin. Phys. Lett., 2010, 27(2): 2379-2381
[11] YU Hai-Ming, S. Granville, YU Da-Peng, J-Ph. Ansermet. Second Harmonic Detection of Spin-Dependent Transport in Magnetic Nanostructures[J]. Chin. Phys. Lett., 2010, 27(2): 2379-2381
[12] XU Ming, SHI Wei, HOU Lei, XUE Hong, WU Shen-Jiang, DAI Hui-Ying. High Current Operation of a Semi-insulating Gallium Arsenide Photoconductive Semiconductor Switch Triggering a Spark Gap[J]. Chin. Phys. Lett., 2010, 27(2): 2379-2381
[13] TIAN Lu, ZHAO Song-Qing, ZHAO Kun, **. Annealing Effect on Photovoltages of Quartz Single Crystals[J]. Chin. Phys. Lett., 2010, 27(12): 2379-2381
[14] LU Hong-Yan, WAN Yuan, HE Xiang-Mei, WANG Qiang-Hua. Mechanism of Pseudogap Detected by Electronic Raman Scattering: Phase Fluctuation or Hidden Order?[J]. Chin. Phys. Lett., 2009, 26(9): 2379-2381
[15] LIAO Leng, JIN Kui-Juan, HAN Peng, ZHANG Li-Li, LÜ, Hui-Bin, GE Chen. Acceptor Concentration Effects on Photovoltaic Response in the La1-xSrxMnO3/SrNbyTi1-yO3 Heterojunction[J]. Chin. Phys. Lett., 2009, 26(5): 2379-2381
Full text