| Original Articles |
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Microstructural Properties of Single Crystalline PbTe Thin Films Grown on BaF2(111) by Molecular Beam Epitaxy |
| SI Jian-Xiao1,3;WU Hui-Zhen1;XU Tian-Ning1;CAO Chun-Fang1;HUANG Zhan-Chao2 |
| 1Department of Physics, Zhejiang University, Hangzhou 310027
2State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
3College of Physics and Mathematics, Zhejiang Normal University, Jinhua 321004 |
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| Cite this article: |
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SI Jian-Xiao, WU Hui-Zhen, XU Tian-Ning et al 2005 Chin. Phys. Lett. 22 2353-2356 |
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Abstract Single crystal PbTe thin films have been grown on BaF2 (111) by using solid source molecular beam epitaxy. The studies of evolution of the surface morphology with the increasing growth temperature from 375 to 525°C by AFM show that PbTe epilayers exhibit smooth surface morphologies with atomic layer scale roughness and are crack free. It is found that for PbTe grown at 475°C, the morphology is dominated by triangles and the rms roughness is 3.987nm. Compared to the rms roughnesses of 0.432nm and 0.759nm for the samples grown at 375 and 525°C respectively, the surface of the PbTe layer grown at 475°C is much rougher. This roughening transition is due to the interaction between the elastic relaxation and the plastic relaxation during the strain relaxation process. In contrast to the result of the morphology that the PbTe epitaxial layer grown at 375°C has most smooth surface, as observed from the line width of x-ray diffraction curves at higher growth temperature improves the crystal quality of the single-crystalline PbTe layer.
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| Keywords:
71.20.Nr
81.15.-z
68.37.Ps
68.55.-a
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Published: 01 September 2005
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| PACS: |
71.20.Nr
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(Semiconductor compounds)
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81.15.-z
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(Methods of deposition of films and coatings; film growth and epitaxy)
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68.37.Ps
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(Atomic force microscopy (AFM))
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68.55.-a
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(Thin film structure and morphology)
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