Chin. Phys. Lett.  2005, Vol. 22 Issue (9): 2269-2272    DOI:
Original Articles |
Low-Threshold-Current and High-out-Power 660nm Laser Diodes with a p-GaAs Current Blocking Layer for DVD-RAM/R
ZHENG Kai;MA Xiao-Yu;LIN Tao;WANG Jun;LIU Su-Ping;ZHANG Guang-Ze
National Engineering Research Center for Opto-electronic Device, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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ZHENG Kai, MA Xiao-Yu, LIN Tao et al  2005 Chin. Phys. Lett. 22 2269-2272
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Abstract We investigate a new structure of high-power 660-nm AlGaInP laser diodes. In the structure, a p-GaAs layer is grown on the ridge waveguide serving as the current-blocking layer, and nonabsorbing windows are only fabricated near the cavity facets to increase the catastrophic-optical-damage level. Stable fundamental mode operation was achieved at up to 80mW without kinks, and the maximum output power was 184mW at 22°C. The threshold current was 40mA.
Keywords: 42.55.Px      81.05.Ea      82.33.Ya     
Published: 01 September 2005
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  81.05.Ea (III-V semiconductors)  
  82.33.Ya (Chemistry of MOCVD and other vapor deposition methods)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I9/02269
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ZHENG Kai
MA Xiao-Yu
LIN Tao
WANG Jun
LIU Su-Ping
ZHANG Guang-Ze
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