Chin. Phys. Lett.  2005, Vol. 22 Issue (8): 2106-2108    DOI:
Original Articles |
Fabrication and Characterization of Ni Thin Films Using Direct-Current Magnetron Sputtering
WANG Hong-Chang;WANG Zhan-Shan;ZHANG Shu-Min;WU Wen-Juan;ZHANG Zhong;GU Zhong-Xiang;XU Yao;WANG Feng-Li;CHENG Xin-Bin;WANG Bei;QIN Shu-Ji;CHEN Ling-Yan
Institute of Precision Optical Engineering, Tongji University, Shanghai 200092
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WANG Hong-Chang, WANG Zhan-Shan, ZHANG Shu-Min et al  2005 Chin. Phys. Lett. 22 2106-2108
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Abstract Ni films are deposited by using ultra high vacuum dc magnetron sputtering onto silicon substrates at room temperature, and the high-quality and high-density films are prepared. The parameters, such as thickness, density and surface roughness, are obtained by using small-angle x-ray diffraction (XRD) analyses with the Marquardt gradient-expansion algorithm. The deposition rate is calculated and the Ni single layer can be fabricated precisely. Based on the fitting results, we can find that the surface roughness of the Ni films is about 0.7nm, the densities of Ni films are around 97% and the deposition rate is 0.26nm/s. The roughness of the surface is also characterized by using an atomic force microscope (AFM). The changing trend of the surface roughness in the simulation of XRD is in good agreement with the AFM measurement.
Keywords: 81.15.-z      85.70.Kh      81.20.-n      68.55.-a     
Published: 01 August 2005
PACS:  81.15.-z (Methods of deposition of films and coatings; film growth and epitaxy)  
  85.70.Kh (Magnetic thin film devices: magnetic heads (magnetoresistive, inductive, etc.); domain-motion devices, etc.)  
  81.20.-n (Methods of materials synthesis and materials processing)  
  68.55.-a (Thin film structure and morphology)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I8/02106
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WANG Hong-Chang
WANG Zhan-Shan
ZHANG Shu-Min
WU Wen-Juan
ZHANG Zhong
GU Zhong-Xiang
XU Yao
WANG Feng-Li
CHENG Xin-Bin
WANG Bei
QIN Shu-Ji
CHEN Ling-Yan
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