| Original Articles |
|
|
|
|
Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films |
| XU Jin;ZHANG Zi-Yu;ZHANG Yang;LIN Bi-Xia;FU Zhu-Xi |
| Department of Physics, University of Science and Technology of China, Hefei 230026 |
|
| Cite this article: |
|
XU Jin, ZHANG Zi-Yu, ZHANG Yang et al 2005 Chin. Phys. Lett. 22 2031-2034 |
|
|
|
Abstract ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002 % on the photoluminescence and current-voltage (I-V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I-V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.
|
| Keywords:
73.20.Hb
78.55.Et
73.61.Ga
|
|
|
Published: 01 August 2005
|
|
| PACS: |
73.20.Hb
|
(Impurity and defect levels; energy states of adsorbed species)
|
| |
78.55.Et
|
(II-VI semiconductors)
|
| |
73.61.Ga
|
(II-VI semiconductors)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
