| Original Articles |
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A 10-GHz Bandwidth Electroabsorption Modulated Laser by Ultra-Low-Pressure Selective Area Growth |
| ZHAO Qian;PAN Jiao-Qing;ZHOU Fan;WANG Bao-Jun;WANG Lu-Feng;WANG Wei |
| National Research Center of Optoelectronic Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| Cite this article: |
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ZHAO Qian, PAN Jiao-Qing, ZHOU Fan et al 2005 Chin. Phys. Lett. 22 2016-2019 |
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Abstract A novel integration technique has been developed using band-gap energy control of InGaAsP/InGaAsP multi-quantum-well (MQW) structures during simultaneous ultra-low-pressure (22 mbar) selective-area-growth (SAG) process in metal-organic chemical vapour deposition. A fundamental study of the controllability of band gap energy by the SAG method is performed. A large band-gap photoluminescence wavelength shift of 83nm is obtained with a small mask width variation (0--30μm). The method is then applied to fabricate an MQW distributed-feedback laser monolithically integrated with an electroabsorption modulator. The experimental results exhibit superior device characteristics with low threshold of 19mA, over 24dB extinction ratio when coupled into a single mode fibre. More than 10GHz modulation bandwidth is also achieved, which demonstrates that the ultra-low-pressure SAG technique is a promising approach for high-speed transmission photonic integrated circuits.
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| Keywords:
68.65.Fg
81.15.Gh
78.55.Cr
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Published: 01 August 2005
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| PACS: |
68.65.Fg
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(Quantum wells)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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78.55.Cr
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(III-V semiconductors)
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