Chin. Phys. Lett.  2005, Vol. 22 Issue (6): 1449-1451    DOI:
Original Articles |
A Silicon-on-Insulator-Based Thermo-Optic Waveguide Switch with Low Insertion Loss and Fast Response
LI Yan-Ping;YU Jin-Zhong;CHEN Shao-Wu
State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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LI Yan-Ping, YU Jin-Zhong, CHEN Shao-Wu 2005 Chin. Phys. Lett. 22 1449-1451
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Abstract A silicon-on-insulator-based thermo-optic waveguide switch integrated with spot size converters is designed and fabricated by inductively coupled plasma reactive ion etching. The device shows good characteristics, including low insertion loss of 8±1dB for wavelength 1530--1580nm and fast response times of 4.6μs for rising edge and 1.9μs for falling edge. The extinction ratios of the two channels are 19.1 and 18dB, respectively.

Keywords: 42.82.Ds      42.82.Et     
Published: 01 June 2005
PACS:  42.82.Ds (Interconnects, including holographic interconnects)  
  42.82.Et (Waveguides, couplers, and arrays)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I6/01449
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