Chin. Phys. Lett.  2005, Vol. 22 Issue (5): 1260-1263    DOI:
Original Articles |
Nanomorph Silicon Thin Films Prepared by Using an HW-MWECR CVD System
HU Yue-Hui1,2;CHEN Guang-Hua1;ZHOU Jian-Er2;RONG Yan-Dong1;LI Ying1;SONG Xue-Mei1;ZHANG Wen-Li1;DING Yi1;GAO Zhuo1;MA Zhan-Jie1;ZHOU Huai-En1;ZHU Xiu-Hong1
1Department of Materials Science and Engineering, Beijing University of Technology, Beijing 100022 2Institute of Jingdezhen Ceramic, Jingdezhen 333001
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HU Yue-Hui, CHEN Guang-Hua, ZHOU Jian-Er et al  2005 Chin. Phys. Lett. 22 1260-1263
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Abstract We have prepared hydrogenated nano-amorph silicon (na-Si:H) films by using a hot-wire-assisted microwave electron-cyclotron-resonance (HW-MWECR) chemical vapour deposition (CVD) system. The films are deposited in two steps: in the first 9min, a hydrogenated amorphous silicon layer is deposited by using hydrogen-diluted silane with a concentration of SiH4/(SiH4+H2)=20%, and then a nanocrystalline silicon (nc-Si) layer is deposited by using various highly hydrogen-diluted silane. The Raman TO-like mode peak of the films was found in the range 497-508cm$^{-1}$. When the silane concentration used for preparation of the nc-Si layer is 14.3%, the film has a large crystalline volume fraction of 65.4%, a wide optical band gap of 1.89eV and a low hydrogen content of 9.5at.%. Moreover, the na-Si:H films rather than nc-Si possess high photosensitivity of about 105.
Keywords: 81.15.Gh      71.23.Cq      78.30.Ly     
Published: 01 May 2005
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  71.23.Cq (Amorphous semiconductors, metallic glasses, glasses)  
  78.30.Ly (Disordered solids)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I5/01260
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HU Yue-Hui
CHEN Guang-Hua
ZHOU Jian-Er
RONG Yan-Dong
LI Ying
SONG Xue-Mei
ZHANG Wen-Li
DING Yi
GAO Zhuo
MA Zhan-Jie
ZHOU Huai-En
ZHU Xiu-Hong
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