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Temperature-Dependent Galvanomagnetic Measurements on Doped InSb and InAs Grown by Liquid Encapsulated Czochralski |
| M. Kasap1;S. Acar1;S. Öcelik1;S. Karadeniz2;N. Tugluoglu2 |
| 1Department of Physics, Faculty of Science and Arts, University of Gazi, Teknikokullar, 06500, Ankara, Turkey
1Department of Materials Research, Ankara Nuclear Research and Training Center, 06100, Besevler, Ankara, Turkey |
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| Cite this article: |
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M. Kasap, S. Acar, S. Ö et al 2005 Chin. Phys. Lett. 22 1218-1221 |
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Abstract Resistivity, magnetoresistivity and Hall effect measurements in n-type Te-doped InSb and S-doped InAs samples grown by the liquid encapsulated Czochralski technique were carried out as a function of temperature (14-350K) and magnetic field (0-1.35T). In Te-doped InSb, an impurity level with energy E1 = 3meV and the activation energy E0= 0.26eV, which is the band gap energy, are obtained from the resistivity and Hall carrier concentration analysis. In S-doped InAs, both the linear and power law models are used in explaining the temperature-dependent resistivity. The effects of impurities on the electron and magnetic transportation properties of InAs and InSb have also been discussed.
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| Keywords:
72.20.My
72.20.Fr
72.80.Ey
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Published: 01 May 2005
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| PACS: |
72.20.My
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(Galvanomagnetic and other magnetotransport effects)
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72.20.Fr
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(Low-field transport and mobility; piezoresistance)
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72.80.Ey
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(III-V and II-VI semiconductors)
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