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Bulk-Quantity Synthesis and Conductive Properties of Comb-Like Dendritic ZnO Nanostructures |
| LIAO Zhi-Min;ZHANG Hong-Zhou;XU Jun;YU Da-Peng |
| State Key Laboratory for Mesoscopic Physics, and Electron Microscopy Laboratory, School of Physics, Peking University, Beijing 100871 |
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| Cite this article: |
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LIAO Zhi-Min, ZHANG Hong-Zhou, XU Jun et al 2005 Chin. Phys. Lett. 22 987-990 |
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Abstract Adopting a simple low-temperature (～500°C) vapour process, we have synthesized bulk quantity comb-like dendritic ZnO nanostructures in large area. An atomic force microscope equipped with Au-coated probes was employed to elucidate the current-voltage characteristic of the individual ZnO nanocomb. The connection electrodes were defined by depositing Pt wires using focused ion beam (FIB). A rectification effect was observed, while it was slightly suppressed compared with that of the previous reports. The good conductive properties of the sample can be attributed to the Ga+ ions implantation through the FIB process of electrode definition. We suggest that the material and the FIB method can be developed to fabricate novel nanosized devices.
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| Keywords:
81.07.Bc
72.20.Ht
68.37.Lp
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Published: 01 April 2005
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| PACS: |
81.07.Bc
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(Nanocrystalline materials)
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72.20.Ht
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(High-field and nonlinear effects)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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