Chin. Phys. Lett.  2005, Vol. 22 Issue (4): 923-926    DOI:
Original Articles |
Effects of Temperature and Pressure on a Novel 1,3,4-Oxadiazole Derivative
LUO Ji-Feng1;HAN Yong-Hao1;TANG Ben-Chen2;GAO Chun-Xiao1;LI Min2;ZOU Guang-Tianv
1National Laboratory of Superhard Materials, Institute of Atomic and Molecular Physics, Jilin University, Changchun 130012 2Key Laboratory for Automobile Materials (Ministry of Education), and Department of Materials Science, Jilin University, Changchun 130012
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LUO Ji-Feng, HAN Yong-Hao, TANG Ben-Chen et al  2005 Chin. Phys. Lett. 22 923-926
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Abstract The electrical resistivity variation of 1,4-bis[(4-methylphenyl)-1,3,4-oxadiazolyl]phenylene (OXD-1) microcrystal is studied under variable pressure and temperature conditions by a quasi four-probe method in a diamond anvil cell. The sample resistivity is calculated with a finite element analysis method. The temperature and pressure dependencies of resistivity of OXD-1 microcrystal are measured up to 150°C and 15GPa. The resistivity decrease with temperature increasing indicates that OXD-1 exhibits an organic-semiconductor transport property in the experimental pressure region. With pressure increasing, the resistivity of OXD-1 increases firstly and reaches the maximum at about 6.2GPa, and then begins to decrease as the pressure increases continuously. In situ x-ray diffraction data under pressure provide obvious prove that the anomaly of resistivity variation at 6.2GPa is caused by the pressure-induced amorphism of OXD-1.
Keywords: 72.20.-i      64.60.-i      07.35.+k      02.70.Dh     
Published: 01 April 2005
PACS:  72.20.-i (Conductivity phenomena in semiconductors and insulators)  
  64.60.-i (General studies of phase transitions)  
  07.35.+k (High-pressure apparatus; shock tubes; diamond anvil cells)  
  02.70.Dh (Finite-element and Galerkin methods)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I4/0923
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LUO Ji-Feng
HAN Yong-Hao
TANG Ben-Chen
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ZOU Guang-Tianv
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