Chin. Phys. Lett.  2005, Vol. 22 Issue (4): 919-922    DOI:
Original Articles |
Ion-Sputter-Induced Nanodots on Si(110): Ion Energy Dependence
LI Wei-Qing1;LING Li2;QI Le-Jun1;YANG Xin-Ju3;FAN Wen-Bin1;GU Chang-Xin2;LU Ming1
1Department of Optical Science and Engineering and State Key Laboratory for Advanced Photonic Materials and Devices, Fudan University, Shanghai 200433 2Department of Materials Science, Fudan University, Shanghai 200433 3Surface Physics Laboratory, Fudan University, Shanghai 200433
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LI Wei-Qing, LING Li, QI Le-Jun et al  2005 Chin. Phys. Lett. 22 919-922
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Abstract Nanodot arrays were formed on Si(110) surface under normal-incident Ar+ ion sputtering at substrate temperature of 800°C. The ion flux was 20μA/cm2, and the ion energies were 1-5keV. The surface was imaged by an atomic force microscope (AFM). It was found that with the increasing ion energy, the average ellipticity of the dots changes in an oscillating manner; meanwhile the average dot size increases monotonously. Based on a dynamic continuum model, and taking into consideration the asymmetry of the Ehrlich-Schwoebel diffusions along the <100> and <110> crystallographic directions, we carry out the simulations, which reproduce the experimental results qualitatively.

Keywords: 68.49.Sf      68.37.Ps      68.35.Bs     
Published: 01 April 2005
PACS:  68.49.Sf (Ion scattering from surfaces (charge transfer, sputtering, SIMS))  
  68.37.Ps (Atomic force microscopy (AFM))  
  68.35.Bs  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I4/0919
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LI Wei-Qing
LING Li
QI Le-Jun
YANG Xin-Ju
FAN Wen-Bin
GU Chang-Xin
LU Ming
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