Chin. Phys. Lett.  2005, Vol. 22 Issue (4): 911-914    DOI:
Original Articles |
Low-Field Emission from Iron Oxide-Filled Carbon Nanotube Arrays
CHAI Yang;YU Li-Gang;WANG Ming-Sheng;ZHANG Qi-Feng;WU Jin-Lei
Department of Electronics, Peking University, Beijing 100871
Cite this article:   
CHAI Yang, YU Li-Gang, WANG Ming-Sheng et al  2005 Chin. Phys. Lett. 22 911-914
Download: PDF(602KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Arrays of multi-walled carbon nanotubes (MWCNTs) filled with iron oxide have been fabricated by a one-step route based on the pyrolysis of ferrocene under a well-chosen synthesis condition. The MWCNT arrays were observed with a scanning electron microscope, with which an energy dispersive x-ray spectrum (EDXS) was also acquired, and they are analysed by x-ray diffraction. Furthermore, individual MWCNTs were studied by using selected area electron diffraction (SAED) and the EDXS in a transmission electron microscopy observation. All the observation and analysis confirmed that the MWCNTs were filled with iron oxide. Field emission from these arrays of iron oxide-filled MWCNTs was measured and the turn-on field was determined to range from 0.83--1.01V/μm, appearing to be much lower than those of arrays of pure MWCNTs and arrays of nitrogen-doped MWCNTs fabricated in similar ways. The possible reasons of the observed low-field emission are discussed.
Keywords: 61.46.+w      79.70.+q      81.15.Gh     
Published: 01 April 2005
PACS:  61.46.+w  
  79.70.+q (Field emission, ionization, evaporation, and desorption)  
  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I4/0911
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
CHAI Yang
YU Li-Gang
WANG Ming-Sheng
ZHANG Qi-Feng
WU Jin-Lei
Related articles from Frontiers Journals
[1] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 911-914
[2] BI Zhi-Wei, HAO Yue, FENG Qian, GAO Zhi-Yuan, ZHANG Jin-Cheng, MAO Wei, ZHANG Kai, MA Xiao-Hua, LIU Hong-Xia, YANG Lin-An, MEI Nan, CHANG Yong-Ming. AlGaN/GaN Metal-Insulator-Semiconductor High Electron-Mobility Transistor Using a NbAlO/Al2O3 Laminated Dielectric by Atomic Layer Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 911-914
[3] SANG Ling**, WANG Jun**, SHI Kai, WEI Hong-Yuan, JIAO Chun-Mei, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. The Growth of Semi-Polar ZnO (10[J]. Chin. Phys. Lett., 2012, 29(1): 911-914
[4] YANG Yan-Ning, ZHANG Zhi-Yong**, ZHANG Fu-Chun, DONG Jun-Tang, ZHAO Wu, ZHAI Chun-Xue, ZHANG Wei-Hu. The Field Emission Characteristics of Titanium-Doped Nano-Diamonds[J]. Chin. Phys. Lett., 2012, 29(1): 911-914
[5] LI Zhe-Yang, **, HAN Ping, LI Yun, NI Wei-Jiang, BAO Hui-Qiang, LI Yu-Zhu . Epitaxial Growth of 4H-SiC on 4° Off-Axis Substrate for Power Devices[J]. Chin. Phys. Lett., 2011, 28(9): 911-914
[6] DAI Ke-Hui, **, WANG Lian-Shan**, HUANG De-Xiu, SOH Chew-Beng, CHUA Soo-Jin, . Influence of Size of ZnO Nanorods on Light Extraction Enhancement of GaN-Based Light-Emitting Diodes[J]. Chin. Phys. Lett., 2011, 28(9): 911-914
[7] CHENG Zai-Jun, SAN Hai-Sheng**, CHEN Xu-Yuan, **, LIU Bo, FENG Zhi-Hong . Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery[J]. Chin. Phys. Lett., 2011, 28(7): 911-914
[8] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 911-914
[9] WEI Meng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, PAN Xu, HOU Qi-Feng, WANG Zhan-Guo . Growth of 2 µm Crack-Free GaN on Si(111) Substrates by Metal Organic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 911-914
[10] HOU Qi-Feng**, WANG Xiao-Liang, XIAO Hong-Ling, WANG Cui-Mei, YANG Cui-Bai, YIN Hai-Bo, LI Jin-Min, WANG Zhan-Guo . Cathodoluminescence of Yellow and Blue Luminescence in Undoped Semi-insulating GaN and n-GaN[J]. Chin. Phys. Lett., 2011, 28(3): 911-914
[11] YU Chen-Hui, LIU Cheng, HAN Xiang-Yun, KANG Wei, FANG Yan-Yan, DAI Jiang-Nan, WU Zhi-Hao, CHEN Chang-Qing** . Properties of Si Doped Al0.4Ga0.6N Epilayers with Different AlGaN Window Layer Grown on High Quality AlN Buffer by MOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 911-914
[12] ZHOU Zhi-Feng, QIN Fu-Wen, **, ZANG Hai-Rong, ZHANG Dong, CHEN Wei-Ji, ZHI An-Bo, LIU Xing-Long, YU Bo, JIANG Xin, . Influence of N2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD[J]. Chin. Phys. Lett., 2011, 28(2): 911-914
[13] LV Wen-Bin, WANG Lai**, WANG Jia-Xing, HAO Zhi-Biao, LUO Yi . Density Increase of Upper Quantum Dots in Dual InGaN Quantum-Dot Layers[J]. Chin. Phys. Lett., 2011, 28(12): 911-914
[14] WANG Yu-Hua**, LI Hui-Qing, LU Jian-Duo, WANG Ru-Wu . Optical Limiting Properties of Ag-Cu Metal Alloy Nanoparticles Analysis by using MATLAB[J]. Chin. Phys. Lett., 2011, 28(11): 911-914
[15] LI Li-Gong, LIU Shu-Man**, LUO Shuai, YANG Tao, WANG Li-Jun, LIU Feng-Qi, YE Xiao-Ling, XU Bo, WANG Zhan-Guo . Effect of Interface Bond Type on the Structure of InAs/GaSb Superlattices Grown by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(11): 911-914
Viewed
Full text


Abstract