Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

Chin. Phys. Lett.

2005, Vol. 22

Issue (3): 654-656 DOI:

Original Articles

Effects of Techniques of Implanting Nitrogen into Buried Oxide on the Characteristics of Partially Depleted SOI PMOSFET

ZHENG Zhong-Shan^1,3;LIU Zhong-Li¹; ZHANG Guo-Qiang¹;LI Ning¹;FAN Kai¹;ZHANG En-Xia²;YI Wan-Bing²;CHEN Meng²;WANG Xi²

¹Microelectronics R&D Centre, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 ²Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 ³Department of Physics, Jinan University, Jinan 250022

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ZHENG Zhong-Shan, LIU Zhong-Li, ZHANG Guo-Qiang et al 2005 Chin. Phys. Lett. 22 654-656

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Abstract Effects of techniques of implanting nitrogen into buried oxide on the characteristics of the partially depleted silicon-on-insulator (SOI) p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) have been studied with three different nitrogen implantation doses, 8×10¹⁵, 2×10¹⁶, and 1×10¹⁷cm^-2. The experimental results show that this technology can affect the threshold voltage, channel hole mobility and output characteristics of the partially depleted SOI PMOSFETs fabricated with the given material and process. For each type of the partially depleted SOI PMOSFET with nitrided buried oxide, the absolute value of the average threshold voltage increases due to the nitrogen implantation. At the same time, the average channel hole mobility decreases because of the nitrogen implantation. In particular, with the high nitrogen implantation doses, the output characteristic curves of the tested transistors present a distinct kink effect, which normally exists in the characteristic output curves of only partially depleted SOI NMOSFETs.

Keywords: 61.72.Tt 85.30.Tv 40.Qv

Published: 01 March 2005

PACS:	61.72.Tt
	85.30.Tv	(Field effect devices)
	73	(Electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
	40.Qv

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2005/V22/I3/0654

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	ZHENG Zhong-Shan
	LIU Zhong-Li
	ZHANG Guo-Qiang
	LI Ning
	FAN Kai
	ZHANG En-Xia
	YI Wan-Bing
	CHEN Meng
	WANG Xi

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