Chin. Phys. Lett.  2005, Vol. 22 Issue (2): 457-459    DOI:
Original Articles |
Fluorescence Lifetime Increasing with F- Ions into Ytterbium-Doped Germanium--Lead--Tellurite Glasses
WANG Guo-Nian1,2;DAI Shi-Xun1;ZHANG Jun-Jie1;XU Shi-Qing1,2;HU Li-Li1;JIANG Zhong-Hong1
1Department of Laserglass, Shanghai Institute of Optics & Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800 2Graduate School of the Chinese Academy of Sciences, Beijing 100039
Cite this article:   
WANG Guo-Nian, DAI Shi-Xun, ZHANG Jun-Jie et al  2005 Chin. Phys. Lett. 22 457-459
Download: PDF(292KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract The effects of F- ions in a germanium--lead--tellurite glass system on the spectral and potential laser properties of the Yb3+ are investigated. The absorption spectra, lifetimes, the emission cross-sections and the minimum pump intensities of the glass system with and without F- ions have been measured and calculated. The results show that the fluorescence lifetime and the minimum pump intensity of Yb3+ ions increase evidently, which indicates that germanium--lead--oxyfluoride tellurite glass is a promising laser host matrix for high power generation. FT-IR spectra were used to analyse the effect of F- ions on OH- groups in this glass system. Analysis demonstrates that addition of fluoride removes the OH- groups and results in improvement of fluorescence lifetime of Yb3+.
Keywords: 73.43.Fj      74.25.Gz      73.61.Jc      76.30.Kg     
Published: 01 February 2005
PACS:  73.43.Fj (Novel experimental methods; measurements)  
  74.25.Gz (Optical properties)  
  73.61.Jc (Amorphous semiconductors; glasses)  
  76.30.Kg (Rare-earth ions and impurities)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I2/0457
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
WANG Guo-Nian
DAI Shi-Xun
ZHANG Jun-Jie
XU Shi-Qing
HU Li-Li
JIANG Zhong-Hong
Related articles from Frontiers Journals
[1] HUANG Xiao-Ming, WU Chen-Fei, LU Hai, XU Qing-Yu, ZHANG Rong, ZHENG You-Dou. Impact of Interfacial Trap Density of States on the Stability of Amorphous InGaZnO-Based Thin-Film Transistors[J]. Chin. Phys. Lett., 2012, 29(6): 457-459
[2] WAN Qi-Jian, FENG Jie, GUO Gang. Crystallization Characteristics of SiNx-Doped SbTe Films for Phase Change Memory[J]. Chin. Phys. Lett., 2012, 29(3): 457-459
[3] XU Xiao-Yan, MA Xiang-Yang, JIN Lu, YANG De-Ren. Effect of Rapid Thermal Annealing Ambient on Photoluminescence of ZnO Films[J]. Chin. Phys. Lett., 2012, 29(3): 457-459
[4] GAO Xi-Li, ZHANG Xiao-Zhong, WAN Cai-Hua, WANG Ji-Min. Voltage-Induced Effect on Resistance of C:N/Si Heterojunctions[J]. Chin. Phys. Lett., 2012, 29(2): 457-459
[5] GONG Sai, WANG Yue-Hua**, ZHAO Xin-Yin, ZHANG Min, ZHAO Na, DUAN Yi-Feng . Structural, Electronic and Optical Properties of BiAl xGa1−xO3 (x=0, 0.25, 0.5 and 0.75)[J]. Chin. Phys. Lett., 2011, 28(8): 457-459
[6] XU Yan-Ling**, ZHAO Hong, WANG Rui, ZHANG Chun-Yu . Green Upconversion Luminescence in Er3+/Yb3+ Codoped CaWO4 Polycrystals[J]. Chin. Phys. Lett., 2011, 28(6): 457-459
[7] SUN Tao, WANG Ming-Qing, SUN Yong-Jian, WANG Bo-Ping, ZHANG Guo-Yi, TONG Yu-Zhen, DUAN Hui-Ling** . Deflection Reduction of GaN Wafer Bowing by Coating or Cutting Grooves in the Substrates[J]. Chin. Phys. Lett., 2011, 28(4): 457-459
[8] KANG Feng-Wen, HU Yi-Hua**, WU Hao-Yi, JU Gui-Fang . Red Afterglow Properties of Eu3+ in CaMoO4 Phosphor[J]. Chin. Phys. Lett., 2011, 28(10): 457-459
[9] GONG Yue-Feng, SONG Zhi-Tang, LING Yun, LIU Yan, LI Yi-Jin. Simulation of Voltage SET Operation in Phase-Change Random Access Memories with Heater Addition and Ring-Type Contactor for Low-Power Consumption by Finite Element Modeling[J]. Chin. Phys. Lett., 2010, 27(6): 457-459
[10] HUANG Qing-Song, DONG Dong-Qing, XU Jian-Ping, ZHANG Xiao-Song, ZHANG Hong-Min, LI Lan. White Emitting ZnS Nanocrystals: Synthesis and Spectrum Characterization[J]. Chin. Phys. Lett., 2010, 27(5): 457-459
[11] CHEN Yi-Feng, SONG Zhi-Tang, CHEN Xiao-Gang, LIU Bo, XU Cheng, FENG Gao-Ming, WANG Liang-Yong, ZHONG Min, FENG Song-Lin. Enhanced Performance of Phase Change Memory Cell Element by Initial Operation and Non-Cumulative Programming[J]. Chin. Phys. Lett., 2010, 27(10): 457-459
[12] ZHOU Xiao-Fang, ZHANG Hui, LI Yong, TANG Xiao-Dong, CHEN Qing-Ming, ZHANG Peng-Xiang. Giant Temperature Coefficient of Resistance in ZnO/Si (111) Thin Films[J]. Chin. Phys. Lett., 2010, 27(1): 457-459
[13] LU Hong-Yan, WAN Yuan, HE Xiang-Mei, WANG Qiang-Hua. Mechanism of Pseudogap Detected by Electronic Raman Scattering: Phase Fluctuation or Hidden Order?[J]. Chin. Phys. Lett., 2009, 26(9): 457-459
[14] DENG Jiang-Xia, YAN Shi-Shen, MEI Liang-Mo, J. P. Liu, B. Altuncevahir, V. Chakka, WANG Yong, ZHANG Ze, SUN Xiang-Cheng, J. Lian, K. Sun. Magnetic Properties and Antiferromagnetic Coupling in Inhomogeneous Zn1-xFexO Magnetic Semiconductor[J]. Chin. Phys. Lett., 2009, 26(2): 457-459
[15] MA Yong-Chang, ZHAO Jie, AN Yu-Kai, LIU Ji-Wen. Dominance of Antinodal Quasiparticles on the Transport Properties of Heavily Overdoped High-Tc Cuprates: Infrared-Reflectance Spectra[J]. Chin. Phys. Lett., 2009, 26(2): 457-459
Viewed
Full text


Abstract