Chin. Phys. Lett.  2005, Vol. 22 Issue (12): 3097-3099    DOI:
Original Articles |
High Speed 2×2 Optical Switch in Silicon-on-Insulator Based on Plasma Dispersion Effect
SUN Fei;YU Jin-Zhong;CHEN Shao-Wu
National Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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SUN Fei, YU Jin-Zhong, CHEN Shao-Wu 2005 Chin. Phys. Lett. 22 3097-3099
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Abstract Based on free carrier plasma dispersion effect, a 2×2 optical switch is fabricated in a silicon-on insulator substrate by inductively coupled-plasma technology and ion implantation. The device has a Mach--Zehnder interferometer structure, in which two directional couplers serve as the power splitter and combiner. The switch presents an insertion loss of 3.04dB and a response time of 496ns.
Keywords: 42.82.Ds      42.82.Et     
Published: 01 December 2005
PACS:  42.82.Ds (Interconnects, including holographic interconnects)  
  42.82.Et (Waveguides, couplers, and arrays)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I12/03097
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