Chin. Phys. Lett.  2005, Vol. 22 Issue (12): 3077-3079    DOI:
Original Articles |
High Temperature Operation of 5.5μm Strain-Compensated Quantum Cascaded Lasers
LU Xiu-Zhen;LIU Feng-Qi;LIU Jun-Qi;JIN Peng;WANG Zhan-Guo
Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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LU Xiu-Zhen, LIU Feng-Qi, LIU Jun-Qi et al  2005 Chin. Phys. Lett. 22 3077-3079
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Abstract We develop 5.5-μm InxGa1-xAs/InyAl1-yAs strain-compensated quantum cascade lasers with InP and InGaAs cladding layers by using solid-source molecular-beam epitaxy. Pulse operation has been achieved up to 323K (50°C) for uncoated 20-μm-wide and 2-mm-long devices. These devices display an output power of 36mW with a duty cycle of 1% at room temperature. In continuous wave operation a record peak optical power of 10mW per facet has been measured at 83K.
Keywords: 42.55.Px      81.15.Hi      78.66.Fd     
Published: 01 December 2005
PACS:  42.55.Px (Semiconductor lasers; laser diodes)  
  81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy)  
  78.66.Fd (III-V semiconductors)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2005/V22/I12/03077
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LU Xiu-Zhen
LIU Feng-Qi
LIU Jun-Qi
JIN Peng
WANG Zhan-Guo
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