| Original Articles |
|
|
|
|
A Transfer Matrix-Based Analysis of Vertical-Cavity Semiconductor Optical Amplifiers |
| WANG Gang;LUO Bin;PAN Wei;XIONG Jie |
| School of Information Science and Technology, Southwest Jiaotong University, Chengdu 610031 |
|
| Cite this article: |
|
WANG Gang, LUO Bin, PAN Wei et al 2005 Chin. Phys. Lett. 22 2561-2564 |
|
|
|
Abstract Based on the transfer matrix method, we present a new one-dimensional steady-state model of vertical-cavity semiconductor optical amplifiers (VCSOAs), in which the longitudinal carrier concentration distribution in the active region and the discontinuity of the refractive index inside the cavity is taken into consideration. The model is theoretically proven to be a reliable one for describing the standing wave effect in a periodic gain structure. By using this model, some optical amplification characteristics of VCSOAs are investigated.
|
| Keywords:
42.55.Sa
42.55.Px
|
|
|
Published: 01 October 2005
|
|
| PACS: |
42.55.Sa
|
(Microcavity and microdisk lasers)
|
| |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
