| Original Articles |
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N-Doped LaAlO3/Si(100) Films with High-k, Low-Leakage Current and Good Thermal Stability |
| XIANG Wen-Feng1;LU Hui-Bin1;CHEN Zheng-Hao1;HE Meng1;LU Xu-Bing2,3;LIU Li-Feng1;GUO Hai-Zhong1;ZHOU Yue-Liang1 |
| 1Institute of Physics & Center for Condensed Matter Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080
2Institute of Microelectronics, Peking University, Beijing 100871
3Digital DNA Laboratories, Motorola Inc., Beijing 100871 |
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| Cite this article: |
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XIANG Wen-Feng, LU Hui-Bin, CHEN Zheng-Hao et al 2005 Chin. Phys. Lett. 22 182-184 |
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Abstract High quality amorphous N-doped LaAlO3 (LaAlON) films have been deposited on Si (100) in nitrogen gas by laser molecular beam epitaxy. The chemical nature and physical distribution of N in LaAlON films has been performed by x-ray photoemission spectroscopy. Compared with LaAlO3, a significant improvement in the interfacial quality and leakage current density was obtained by nitrogen additive. At gate voltage +1V, the leakage current density of the LaAlON film with an equivalent oxide thickness as thin as 2nm is obtained to be 2.9× 10-6A/cm2, which decreases almost two orders of magnitude from that of LaAlO3 film with the same thickness. Moreover, high-resolution transmission electron microscope analysis show that the LaAlON sample is still amorphous with a very sharp interface between the LaAlON layer and the Si substrate after annealed at 900°C for 60s.
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| Keywords:
68.55.Ln
77.55.+f
77.84.Bw
73.40.Qv
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Published: 01 January 2005
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| PACS: |
68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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77.55.+f
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77.84.Bw
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(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
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73.40.Qv
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(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
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