| Original Articles |
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Temperature-Dependent Barrier Characteristics of Inhomogeneous In/p-Si (100) Schottky Barrier Diodes |
| N. Tugluoglu1;S. Karadeniz1;S. Acar2;M. Kasap2 |
| 1Department of Materials Research, Ankara Nuclear Research and Training Centre, 06100, Besevler, Ankara, Turkey
2Department of Physics, Faculty of Arts and Sciences, Gazi University, 06500, Ankara, Turkey |
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| Cite this article: |
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N. Tugluoglu, S. Karadeniz, S. Acar et al 2004 Chin. Phys. Lett. 21 1795-1798 |
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Abstract The current-voltage (I--V) characteristics of In/p-Si Schottky barrier diodes have been determined in the temperature range 100--300K and have been interpreted based on the assumption of a Gaussian distribution of barrier heights due to barrier height inhomogeneities that prevail at the metal- semiconductor interface. The evaluation of the experimental I--V data reveals a decrease of zero-bias barrier height but an increase of ideality factor n with decreasing temperature. The inhomogeneities are considered to have Gaussian distribution with a mean zero-bias barrier height of 0.630eV and standard deviation of 0.083V at zero bias. Furthermore, the mean barrier height and the Richardson constant values were obtained to be 0.617eV and 20.71A K-2 cm-2, respectively, by means of the modified Richardson plot, (I0/T2) - (q2σs0/2k2T2) versus 1000/T.
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| Keywords:
73.30.+y
73.40.Ns
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Published: 01 September 2004
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| PACS: |
73.30.+y
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(Surface double layers, Schottky barriers, and work functions)
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73.40.Ns
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(Metal-nonmetal contacts)
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