Chin. Phys. Lett.  2004, Vol. 21 Issue (8): 1640-1643    DOI:
Original Articles |
A Thermally Activated Exciton--Exciton Collision Process in ZnO Microrods
ZHAO Dong-Xu1;LIU Yi-Chun1,2;SHEN De-Zhen1;LU You-Ming1;ZHANG Ji-Ying1;FAN Xi-Wu1
1The Key Laboratory of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun 130022 2Centre for Advanced Optoelectronic Functional Material Research, Northeast Normal University, Changchun 130024
Cite this article:   
ZHAO Dong-Xu, LIU Yi-Chun, SHEN De-Zhen et al  2004 Chin. Phys. Lett. 21 1640-1643
Download: PDF(535KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Room-temperature P-band emission induced by an exciton--exciton collision process was observed in ZnO micro-rods. Both temperature- and excitation-intensity-dependent photoluminescence (PL) measurements were conducted. The excitation-intensity-dependent measurement illustrated that the P-band emission could occur at far lower excitation intensity than that reported in the literature. Higher-order transitions were also observed at the excitation intensity of 7.1kW/cm2 or above. The temperature-dependent PL showed that the P-band emission process was thermally activated. It is suggested that both the density and activity of free excitons played important roles in the exciton--exciton collision process.
Keywords: 78.55.Et      78.67.Lt      78.55.Hx      81.05.Ea     
Published: 01 August 2004
PACS:  78.55.Et (II-VI semiconductors)  
  78.67.Lt (Quantum wires)  
  78.55.Hx (Other solid inorganic materials)  
  81.05.Ea (III-V semiconductors)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I8/01640
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHAO Dong-Xu
LIU Yi-Chun
SHEN De-Zhen
LU You-Ming
ZHANG Ji-Ying
FAN Xi-Wu
Related articles from Frontiers Journals
[1] WANG Guo-Biao, XIONG Huan, LIN You-Xi, FANG Zhi-Lai, KANG Jun-Yong, DUAN Yu, SHEN Wen-Zhong. Green Emission from a Strain-Modulated InGaN Active Layer[J]. Chin. Phys. Lett., 2012, 29(6): 1640-1643
[2] CHENG Feng-Feng , FA Tao, WANG Xin-Qiang, YAO Shu-De. Dislocation and Elastic Strain in an InN Film Characterized by Synchrotron Radiation X-Ray Diffraction and Rutherford Backscattering/Channeling[J]. Chin. Phys. Lett., 2012, 29(2): 1640-1643
[3] SANG Ling, LIU Jian-Ming, XU Xiao-Qing, WANG Jun, ZHAO Gui-Juan, LIU Chang-Bo, GU Cheng-Yan, LIU Gui-Peng, WEI Hong-Yuan, LIU Xiang-Lin, YANG Shao-Yan, ZHU Qin-Sheng, WANG Zhan-Guo. Morphological Evolution of a-GaN on r-Sapphire by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2012, 29(2): 1640-1643
[4] LIU Ling, XU Xiao-Liang**, LEI Jie-Mei, YIN Nai-Qiang. Nanostructured Metal-Enhanced Photoluminescence of Micro-Sr2Si5N8:Eu2+ Phosphors[J]. Chin. Phys. Lett., 2012, 29(1): 1640-1643
[5] SONG Shi-Wei, LIANG Hong-Wei**, LIU Yang, XIA Xiao-Chuan, SHEN Ren-Sheng, LUO Ying-Min, DU Guo-Tong,. A Study of GaN Grown on SiH4 Pre-Treated 6H-SiC Substrates[J]. Chin. Phys. Lett., 2012, 29(1): 1640-1643
[6] ZHOU Yan, WANG Hai-Long**, MA Chuan-He, GONG Qian, FENG Song-Lin . Fabrication of Hinged Mirrors Using a Strain-Driven Self-Assembly Method on a GaAs Substrate[J]. Chin. Phys. Lett., 2011, 28(7): 1640-1643
[7] PAN Jian-Hai, WANG Xin-Qiang**, CHEN Guang, LIU Shi-Tao, FENG Li, XU Fu-Jun, TANG Ning, SHEN Bo*** . Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy[J]. Chin. Phys. Lett., 2011, 28(6): 1640-1643
[8] WU Meng, **, ZENG Yi-Ping, , WANG Jun-Xi, HU Qiang . Investigation of a GaN Nucleation Layer on a Patterned Sapphire Substrate[J]. Chin. Phys. Lett., 2011, 28(6): 1640-1643
[9] LIU Yan-Song, LU Hai-Fei, XU Xiao-Liang**, GONG Mao-Gang, LIU Ling, YANG Zhou . Localized Surface Plasmons Enhanced Ultraviolet Emission of ZnO Films[J]. Chin. Phys. Lett., 2011, 28(5): 1640-1643
[10] LIU Zhan-Hui, XIU Xiang-Qian**, YAN Huai-Yue, ZHANG Rong, XIE Zi-Li, HAN Ping, SHI Yi, ZHENG You-Dou . Gallium Nitride Nanowires Grown by Hydride Vapor Phase Epitaxy[J]. Chin. Phys. Lett., 2011, 28(5): 1640-1643
[11] CHEN Hai-Yang, JIANG Lan**, LI Da-Rang . Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction[J]. Chin. Phys. Lett., 2011, 28(5): 1640-1643
[12] ZHONG Hai-Yang, LUO Xi-Xian**, MA Lu-Bin, ZHANG Ming, XING Ming-Ming, FU Yao . Preparation of Gd2O2S:Yb,Ho Phosphor via Thermolysis of Sulfur−Contained (Gd,Yb,Ho)[S2CN(C4H8)]3 Phen Complexes[J]. Chin. Phys. Lett., 2011, 28(4): 1640-1643
[13] CHEN Yao**, JIANG Yang, XU Pei-Qiang, MA Zi-Guang, WANG Xiao-Li, WANG Lu, JIA Hai-Qiang, CHEN Hong . Stress Control in GaN Grown on 6H-SiC by Metalorganic Chemical Vapor Deposition[J]. Chin. Phys. Lett., 2011, 28(4): 1640-1643
[14] REN Guo-Zhong, LIU Yang, MA Hong-An, SU Tai-Chao, LIN Le-Jing, DENG Le, JIANG Yi-Ping, ZHENG Shi-Zhao, JIA Xiao-Peng** . Thermoelectric Properties of Te-Doped Ba0.32Co4Sb12−xTexPrepared at HPHT[J]. Chin. Phys. Lett., 2011, 28(4): 1640-1643
[15] TANG Hai-Ping, HE Hai-Ping**, LIU Chao, KWON Bong-Jun, YE Zhi-Zhen, LEE Soonil, PARK Ji-Yong*** . Photoluminescence of Nominally Undoped Heavy n-Type ZnO Nanowires[J]. Chin. Phys. Lett., 2011, 28(2): 1640-1643
Viewed
Full text


Abstract