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Two Types of Pressure Dependence of Residual Resistivity in Doped Kondo Insulators |
| YUAN Yi-Zhe;LI Zheng-Zhong;XIAO Ming-Wen;XU Wang;XU Xiao-Hua |
| Department of Physics, Nanjing University, Nanjing 210093 |
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| Cite this article: |
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YUAN Yi-Zhe, LI Zheng-Zhong, XIAO Ming-Wen et al 2004 Chin. Phys. Lett. 21 1348-1351 |
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Abstract The pressure dependence of the residual resistivity of the doped electron-type and hole-type Kondo insulators (KIs) are calculated within the framework of the slave-boson mean-field theory and the coherent potential approximation. It is shown that as the pressure increases, the resistivity increases and decreases for the dilute doping electron-type and hole-type KIs, respectively. These results are qualitatively in agreement with the experiments.
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| Keywords:
75.30.Mb
72.28.+d
75.20.Hr
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Published: 01 July 2004
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| PACS: |
75.30.Mb
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(Valence fluctuation, Kondo lattice, and heavy-fermion phenomena)
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72.28.+d
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75.20.Hr
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(Local moment in compounds and alloys; Kondo effect, valence fluctuations, heavy fermions)
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