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Structural and Optical Characteristics of InGaN/GaN Multi-Quantum Wells Grown on a- and c-Plane Sapphire Substrates |
| YU Hong-Bo;CHEN Hong;LI Dong-Sheng;ZHOU Jun-Ming |
| State Key Laboratory for Surface Physics, Institute of Physics, Chinese Academy of Sciences, PO Box 603, Beijing 100080 |
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| Cite this article: |
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YU Hong-Bo, CHEN Hong, LI Dong-Sheng et al 2004 Chin. Phys. Lett. 21 1323-1326 |
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Abstract We investigate the structural and optical properties of InGaN-based multi-quantum wells grown on a-c plane sapphire substrates by atomic force microscopy, high-resolution x-ray diffraction and temperature-dependent photoluminescence measurements. The multi-quantum wells grown on a-plane sapphire substrate show stronger exciton localization effect compared with that grown on the c-plane substrate, although the threading dislocation densities in the two samples are almost the same. We attribute the results to the different in-plane strain of quantum well grown on different substrate orientations at the same growth temperature. Since the exciton localization effect plays a key role to obtain high efficiency InGaN-based optoelectronics devices, the presented result should be emphasized.
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| Keywords:
68.65.Fg
78.67.De
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Published: 01 July 2004
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