Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition

Chin. Phys. Lett.

2004, Vol. 21

Issue (7): 1320-1322 DOI:

Original Articles

Growth of Nanocrystalline Silicon Films by Helicon Wave Plasma Chemical Vapour Deposition

YU Wei;WANG Bao-Zhu;LU Wan-Bing;YANG Yan-Bin;HAN Li;FU Guang-Sheng

College of Physical Science and Technology, Hebei University, Baoding 071002

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YU Wei, WANG Bao-Zhu, LU Wan-Bing et al 2004 Chin. Phys. Lett. 21 1320-1322

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Abstract Nanocrystalline silicon (nc-Si) thin films have been prepared by a helicon-wave plasma chemical vapour deposition technique on glass-Si substrates. The structural properties and the surface morphology are characterized by Raman spectroscopy, x-ray diffraction and atomic force microscopy. It is proven that the deposited films have the features of high crystalline fraction and large grain size compared with that in the normal plasma-enhanced chemical vapour deposition regime. The crystalline fraction of the deposited films varying from 0% to 72% can be obtained by adjusting the substrate temperature.

Keywords: 68.55.-a 68.12.Rx

Published: 01 July 2004

PACS:	68.55.-a	(Thin film structure and morphology)
	68.12.Rx

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https://cpl.iphy.ac.cn/ OR https://cpl.iphy.ac.cn/Y2004/V21/I7/01320

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	YU Wei
	WANG Bao-Zhu
	LU Wan-Bing
	YANG Yan-Bin
	HAN Li
	FU Guang-Sheng

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