Chin. Phys. Lett.  2004, Vol. 21 Issue (6): 1168-1170    DOI:
Original Articles |
Fast Growth of Polycrystalline Film in SiCl4/H2 Plasma
HUANG Rui;LIN Xuan-Ying;YU Yun-Peng;LIN Kui-Xun;WEI Jun-Hong;YU Chu-Ying;WANG Zhao-Kui
Department of Physics, Shantou University, Shantou 515063
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HUANG Rui, LIN Xuan-Ying, YU Yun-Peng et al  2004 Chin. Phys. Lett. 21 1168-1170
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Abstract We report the discovery of fast growth of polycrystalline silicon films under low temperature of 200-300°C from SiCl4/H2 mixture gases by plasma enhanced chemical vapour deposition technique. The deposition rate strongly depends not only on the rf power and the flow ratio of H2/SiCl4, but also on the substrate temperature, while the crystalline fraction is mainly affected by both the rf power and the flow ratio of H2/SiCl4. The high film-growth rate is due to the enhancement of the gas-phase reaction in SiCl4/H2 plasma. By means of adjusting the matching relation between the flow ratio of H2/SiCl4 and rf power, and optimizing the substrate temperature, we obtain the polycrystalline silicon films deposited at a higher deposition rate over 3.5Å/s, with a crystalline fraction of 75% and an average crystallite size of 400-500 nm in diameter.

Keywords: 81.15.Gh      82.33.Xj      68.35.Rh     
Published: 01 June 2004
PACS:  81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))  
  82.33.Xj (Plasma reactions (including flowing afterglow and electric discharges))  
  68.35.Rh (Phase transitions and critical phenomena)  
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https://cpl.iphy.ac.cn/       OR      https://cpl.iphy.ac.cn/Y2004/V21/I6/01168
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HUANG Rui
LIN Xuan-Ying
YU Yun-Peng
LIN Kui-Xun
WEI Jun-Hong
YU Chu-Ying
WANG Zhao-Kui
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