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Enhancement of the Spectral Width of High-Power 1.5 μm Integrated Superluminescent Light Source by Quantum Well Intermixing Process |
| XU Cheng-Dong1;DU Guo-Tong1;SONG Jun-Feng1;HUANG Yong-Zhen2 |
| 1College of Science and Engineering, State Key Laboratory on Integrated Optoelectronics, Jilin University, Changchun 130023
2State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
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| Cite this article: |
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XU Cheng-Dong, DU Guo-Tong, SONG Jun-Feng et al 2004 Chin. Phys. Lett. 21 963-965 |
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Abstract A novel type of integrated InGaAsP superluminescent light source was fabricated based on the tilted ridge-waveguide structure with selective-area quantum well (QW) intermixing. The bandgap structure along the length of the device was modified by impurity free vacancy diffusion QW intermixing. The spectral width was broadened from the 16 nm of the normal devices to 37 nm of the QW intermixing enhanced devices at the same output power level. High superluminescent power (210 mW) was obtained under pulsed conditions with a spectral width of 37 nm.
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| Keywords:
78.67.De
85.60.Jb
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Published: 01 May 2004
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