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Barrier Optical Waveguide Formation in La3Ga5SiO14 Crystals by High Energy Carbon Ion Implantation |
| WANG Xue-Lin1;CHEN Feng1;LU Fei1;FU Gang1;LI Shi-Ling1;WANG Ke-Ming1;ZHANG Huai-Jin2;SHEN Ding-Yu3;MA Hong-Ji3;NIE Rui3 |
| 1Department of Physics, Shandong University, Jinan 250100
2State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100
3Department of Technical Physics and the Key Laboratory of Heavy Ion Physics (Ministry of Education), Peking University, Beijing 100871 |
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| Cite this article: |
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WANG Xue-Lin, CHEN Feng, LU Fei et al 2004 Chin. Phys. Lett. 21 867-869 |
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Abstract The barrier planar waveguides are fabricated for the first time in z-cut LGS (La3Ga5SiO14) crystals by 3.0 MeV and 6.0 MeV carbon ion implantations with dose of 2 x 1015ions/cm2 at room temperature. Four and six dark modes were observed by the prism-coupling method, respectively. The refractive index profiles were reconstructed by using the reflectivity calculation method. There are about 1.6% and 0.9% decreases at the optical barriers in the 3.0 MeV and 6.0 MeV cases, and the positions of the optical barriers are close to that of the damage peaks calculated by the TRIM'98 (Transport of Ions in Matter) code. It is found that the refractive index change may partly be due to the damage induced by the nuclear collision.
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| Keywords:
42.79.Gn
61.72.Tt
77.84.-s
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Published: 01 May 2004
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| PACS: |
42.79.Gn
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(Optical waveguides and couplers)
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61.72.Tt
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77.84.-s
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(Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials)
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