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Highly c-Oriented Nanocolumn Structure ZnO Films on Sapphire Substrates by Pulsed Laser Deposition |
| LIU Zhi-Fu1;LI Yong-Xiang1;SHAN Fu-Kai2;XU Zhi-Hua1;YU Yun-Sik2 |
| 1The State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Shanghai 200050
2Electronic Ceramics Center, Dongeui University, Busan 614-714, Korea
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| Cite this article: |
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LIU Zhi-Fu, LI Yong-Xiang, SHAN Fu-Kai et al 2004 Chin. Phys. Lett. 21 747-749 |
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Abstract Highly c-oriented nanocolumn structure ZnO films were successfully deposited on sapphire (0001) substrates by pulsed laser deposition at a substrate temperature of 500°C and 200 mTorr oxygen pressure. X-ray diffraction, scanning electron microscopy, photoluminescence, and spectroscopic ellipsometry were used to characterize the ZnO films. The as-grown film is composed of well-aligned ZnO columns with diameters about 200-300 nm. Photoluminescence spectrum of the ZnO film exhibits a strong near-band-edge emission and a weak deep-level emission band. The optical refractive indices and the extinction coefficients are obtained by fitting the spectroscopic ellipsometry data using the Forouhi-Bloomer dispersion relation.
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| Keywords:
81.15.Fg
81.05.Dz
78.55.Et
78.20.Ci
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Published: 01 April 2004
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| PACS: |
81.15.Fg
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(Pulsed laser ablation deposition)
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81.05.Dz
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(II-VI semiconductors)
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78.55.Et
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(II-VI semiconductors)
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78.20.Ci
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(Optical constants (including refractive index, complex dielectric constant, absorption, reflection and transmission coefficients, emissivity))
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