| Original Articles |
|
|
|
|
Temperature-Induced Switching-Over of the Luminescence Transitions in GaInNAs/GaAs Quantum Wells |
| BIAN Li-Feng;JIANG De-Sheng;LIANG Xiao-Gan;LU Shu-Long |
| State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 |
|
| Cite this article: |
|
BIAN Li-Feng, JIANG De-Sheng, LIANG Xiao-Gan et al 2004 Chin. Phys. Lett. 21 548-551 |
|
|
|
Abstract Photoluminescence (PL) spectra of the GaInNAs/GaAs single quantum well (SQW) with different N compositions are carefully studied in a range of temperatures and excitation power densities. The anomalous S-shape temperature dependence of the PL peak is analysed based on the competition and switching-over between the peaks related to N-induced localized states and the peak related to interband excitonic recombination. It is found that with increasing N composition, the localized energy increases and the turning point of the S-shape temperature dependence occurs at higher temperature, where the localized carriers in the band tail states obtain enough thermal activation energy to be dissociated and delocalized. The rapid thermal annealing (RTA) effectively reduces the localized energy and causes a decrease of the switching-over temperature.
|
| Keywords:
77.84.Bw
76.60.Jv
78.55.-m
|
|
|
Published: 01 March 2004
|
|
| PACS: |
77.84.Bw
|
(Elements, oxides, nitrides, borides, carbides, chalcogenides, etc.)
|
| |
76.60.Jv
|
|
| |
78.55.-m
|
(Photoluminescence, properties and materials)
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
